isocom components 2004 ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1ud tel: (01429) 863609 fax :(01429) 863581 17/7/08 option g 7.62 0.26 0.5 dimensions in mm surface mount option sm 10.16 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 2.54 0.26 7.62 6.62 0.5 approvals z ul recognised, file no. e91231 package code " gg " 'x' specification approvals z vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 z certified to en60950 by :- nemko - certificate no. p01102464 description the 4N38, 4N38a series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high bv ceo (80v min) z high isolation voltage (5.3kv rms ,7.5kv pk ) z all electrical parameters 100% tested z custom electrical selections available applications z dc motor controllers z industrial systems controllers z measuring instruments z signal transmission between systems of different potentials and impedances optically coupled isolator phototransistor output 1 34 6 25 4N38x, 4N38ax 4N38, 4N38a 10.46 9.86 0.6 0.1 1.25 0.75 db90047 absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 105mw output transistor collector-emitter voltage bv ceo 80v collector-base voltage bv cbo 80v emitter-collector voltage bv eco 6v collector current 50ma power dissipation 160mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse current (i r )10 av r = 6v output collector-emitter breakdown (bv ceo )80 v i c = 1ma ( note 2 ) collector-base breakdown (bv cbo )80 v i c = 100 a emitter-collector breakdown (bv eco ) 6 v i e = 100 a collector-emitter dark current (i ceo )50nav ce = 60v collector-base dark current (i cbo )20nav ce = 60v coupled current transfer ratio (ctr) 20 % 10ma i f , 10v v ce collector-emitter saturation voltagev ce(sat) 1.0 v 20ma i f , 4ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) response time (rise) 2 sv cc = 5v , response time (fall) 2 si f = 10ma, r l = 75 (fig 1) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 17/7/08 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 75 input 10% 90% 90% 10% t on t r fig 1 v cc t off t f db90047m-aas/a3
17/7/08 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 1 2 5 10 20 50 0 1.2 1.6 2.0 2.4 2.8 v ce = 1v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 0.8 0.4 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio ambient temperature t a ( c ) -30 0 25 50 75 100 -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 20ma i c = 4ma db90047m-aas/a3
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